Develop an understanding of process and device requirements for new NAND cells and help refine requirements, as necessary. Propose and evaluate novel electrical characterization methods, to drive fundamental material understanding for future NAND cell technologies. Analyze cell performance and reliability data collected across automated test platforms, including live array and scribe test structures. Contribute to the architecture and process definition for state-of-the-art NAND cell, by providing expertise in NAND device physics and array operation. Collaborate effectively with process, integration, product, and design engineers, to address NAND memory cell deficits and deliver improvement roadmaps. M.S or Ph.D. in Electrical or Electronics Engineering, Physics or Materials Science Engineering or similar. 3+ years of work experience in Semiconductor Industry, preferably in Non-volatile memories. Deep understanding of semiconductor device physics and processes. Knowledge of statistical methods for experiment design and data analysis. Solid communication and reporting abilities. The ability to be highly skilled at driving for results.
